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WeEn Semiconductors BUJ103AD,118 BJTs - Bipolar Transistors Trans GP BJT NPN 400V 4A 3-Pin(2+Tab)

Width: 6.22 mm

Height: 2.38 mm

Length: 6.73 mm

Technology: Si

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 80 W

DC Current Gain hFE Max: 32

Collector- Base Voltage VCBO: 700 V

Maximum DC Collector Current: 4 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 10

Collector- Emitter Voltage VCEO Max: 400 V

Collector-Emitter Saturation Voltage: 250 mV

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