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WeEn Semiconductors WG50N65LDJ1Q IGBT Transistors WG50N65LDJ1/SOT1293/STANDARD MARKING * HORIZONTAL, RAIL PACK

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 78 W

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 650 V

Collector-Emitter Saturation Voltage: 1.25 V

Continuous Collector Current at 25 C: 43 A

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