HEMTs Radar Dải C GaN HEMT 5.2-5.9GHz, 350 Watt MACOM CGHV59350F

Gain: 11 dB

Technology: GaN

Unit Weight: 37 g

Output Power: 450 W

Mounting Style: SMD/SMT

Transistor Type: GaN HEMT

Number of Channels: 1 Channel

Maximum Operating Frequency: 5.9 GHz

Minimum Operating Frequency: 5.2 GHz

Maximum Operating Temperature: + 85 C

Minimum Operating Temperature: - 40 C

Vgs - Gate-Source Breakdown Voltage: - 10 V, 2 V

Vds - Drain-Source Breakdown Voltage: 125 V

Vgs th - Gate-Source Threshold Voltage: - 3 V