Transistor GaN FET, GaN, DC-3000MHz MACOM NPT25015D

Gain: 14 dB

Technology: GaN

Mounting Style: SMD/SMT

Transistor Type: HEMT

Transistor Polarity: N-Channel

Pd - Power Dissipation: 28 W

Maximum Operating Frequency: 3 GHz

Minimum Operating Frequency: 0 Hz

Id - Continuous Drain Current: 5 A

Maximum Operating Temperature: + 85 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 450 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: - 1.8 V