BJTs - Transistor Lưỡng Cực PNP Silicon Đóng Gói Nhựa Micro Commercial Components (MCC) 2SA1015-GR-AP

Technology: Si

Unit Weight: 212 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 400 mW

DC Current Gain hFE Max: 400

Gain Bandwidth Product fT: 80 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 50 V

Continuous Collector Current: 150 mA

Maximum DC Collector Current: 150 mA

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 70

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 300 mV