Transistor Lưỡng Cực BJTs 40V 600mA 400mW PNP 3 Chân CER Tín Hiệu Nhỏ BJT Microchip Technology 2N2906AUB/TR

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 500 mW

DC Current Gain hFE Max: 175 at 1 mA, 10 V

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 60 V

Maximum DC Collector Current: 600 mA

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 40 at 100 uA, 10 V

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 400 mV