Transistor Lưỡng Cực 80V 2A 1W NPN Công Suất BJT Dạng Gắn Qua Lỗ Microchip Technology 2N5154

Technology: Si

Unit Weight: 6.852 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 1 W

DC Current Gain hFE Max: 200 at 2.5 A, 5 VDC

Emitter- Base Voltage VEBO: 5.5 V

Collector- Base Voltage VCBO: 100 V

Maximum DC Collector Current: 2 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 70 at 2.5 A, 5 VDC

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 750 mV