BJTs - Transistor lưỡng cực Power BJT Microchip Technology 2N6295

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 50 W

DC Current Gain hFE Max: 18000

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 80 V

Continuous Collector Current: 4 A

Maximum DC Collector Current: 8 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 750

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 3 V