MOSFETs MOSFET MOS8 1000 V 14 A TO-247 Microchip Technology APT14M100B

Width: 16.26 mm

Height: 5.31 mm

Length: 21.46 mm

Fall Time: 26 ns

Rise Time: 29 ns

Technology: Si

Unit Weight: 6 g

Channel Mode: Enhancement

Mounting Style: Through Hole

Qg - Gate Charge: 120 nC

Transistor Polarity: N-Channel

Pd - Power Dissipation: 500 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 28 ns

Typical Turn-Off Delay Time: 95 ns

Id - Continuous Drain Current: 14 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 16 S

Rds On - Drain-Source Resistance: 710 mOhms

Vds - Drain-Source Breakdown Voltage: 1 kV

Vgs th - Gate-Source Threshold Voltage: 4 V