Transistor IGBT IGBT PT MOS 8 Combi 900 V 27 A TO-247 Microchip Technology APT27GA90BD15

Width: 15.49 mm

Height: 4.69 mm

Length: 20.8 mm

Technology: Si

Unit Weight: 38 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 223 W

Operating Temperature Range: - 55 C to + 150 C

Continuous Collector Current: 48 A

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: - 30 V, 30 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 900 V

Continuous Collector Current Ic Max: 48 A

Collector-Emitter Saturation Voltage: 2.5 V

Continuous Collector Current at 25 C: 48 A