MOSFET MOS7 300 V 61 mOhm TO-247 Microchip Technology APT30M61BLLG

Technology: Si

Unit Weight: 6 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 64 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 403 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Id - Continuous Drain Current: 54 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 61 mOhms

Vds - Drain-Source Breakdown Voltage: 300 V

Vgs th - Gate-Source Threshold Voltage: 3 V