MOSFET MOS8 1000 V 37 A TO-247 MAX Microchip Technology APT37M100B2

Fall Time: 38 ns

Rise Time: 40 ns

Technology: Si

Unit Weight: 6 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 305 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.135 kW

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 44 ns

Typical Turn-Off Delay Time: 150 ns

Id - Continuous Drain Current: 37 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 39 S

Rds On - Drain-Source Resistance: 330 mOhms

Vds - Drain-Source Breakdown Voltage: 1 kV

Vgs th - Gate-Source Threshold Voltage: 4 V