Transistor IGBT IGBT PT MOS 8 Kết hợp 900 V 43 A TO-247 Microchip Technology APT43GA90BD30

Width: 16.26 mm

Height: 5.31 mm

Length: 21.46 mm

Technology: Si

Unit Weight: 38 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 337 W

Operating Temperature Range: - 55 C to + 150 C

Continuous Collector Current: 78 A

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: - 30 V, 30 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 900 V

Continuous Collector Current Ic Max: 78 A

Collector-Emitter Saturation Voltage: 2.5 V

Continuous Collector Current at 25 C: 78 A