MOSFET MOSFET MOS7 800 V 20 Ohm TO-247 MAX Microchip Technology APT8020B2LLG

Width: 20.5 mm

Height: 5.21 mm

Length: 26.49 mm

Fall Time: 9 ns

Rise Time: 14 ns

Technology: Si

Unit Weight: 6 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 195 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 694 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 12 ns

Typical Turn-Off Delay Time: 39 ns

Id - Continuous Drain Current: 38 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 200 mOhms

Vds - Drain-Source Breakdown Voltage: 800 V

Vgs th - Gate-Source Threshold Voltage: 5 V