MOSFET MOS8 500 V 84 A TO-247 MAX Microchip Technology APT84M50B2

Fall Time: 50 ns

Rise Time: 70 ns

Technology: Si

Unit Weight: 6 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 340 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.135 kW

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 60 ns

Typical Turn-Off Delay Time: 155 ns

Id - Continuous Drain Current: 84 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 65 S

Rds On - Drain-Source Resistance: 65 mOhms

Vds - Drain-Source Breakdown Voltage: 500 V

Vgs th - Gate-Source Threshold Voltage: 3 V