FET 350V 35Ohm Microchip Technology DN3135K1-G

Width: 1.3 mm

Height: 0.95 mm

Length: 2.9 mm

Fall Time: 20 ns

Rise Time: 15 ns

Technology: Si

Unit Weight: 8 mg

Channel Mode: Depletion

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 360 mW

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 10 ns

Typical Turn-Off Delay Time: 15 ns

Id - Continuous Drain Current: 72 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 140 mS

Rds On - Drain-Source Resistance: 35 Ohms

Vds - Drain-Source Breakdown Voltage: 350 V

Vgs th - Gate-Source Threshold Voltage: 3.5 V