FET 500V 1KOhm Microchip Technology LND150N3-G

Width: 4.19 mm

Height: 5.33 mm

Length: 5.21 mm

Fall Time: 1.3 us

Rise Time: 0.45 us

Technology: Si

Unit Weight: 453.600 mg

Channel Mode: Depletion

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 740 mW

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 90 ns

Typical Turn-Off Delay Time: 100 ns

Id - Continuous Drain Current: 30 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 1 mOhms

Rds On - Drain-Source Resistance: 1 kOhms

Vds - Drain-Source Breakdown Voltage: 500 V