mSiC MOSFET MOSFET SIC 1200 V 25 mOhm PSMT Microchip Technology MSC025SMA120SCT/R

Fall Time: 24 ns

Rise Time: 16 ns

Technology: SiC

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 232 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 524 W

Vgs - Gate-Source Voltage: - 10 V, + 23 V

Typical Turn-On Delay Time: 47 ns

Typical Turn-Off Delay Time: 39 ns

Id - Continuous Drain Current: 108 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 25 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 3 V