SiC MOSFETS MOSFET SiC 1700 V 35 mOhm TO-268 Microchip Technology MSC035SMA170S

Fall Time: 20 ns

Rise Time: 10 ns

Technology: SiC

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 178 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 278 W

Vgs - Gate-Source Voltage: - 10 V, + 23 V

Typical Turn-On Delay Time: 38 ns

Typical Turn-Off Delay Time: 26 ns

Id - Continuous Drain Current: 59 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 35 mOhms

Vds - Drain-Source Breakdown Voltage: 1.7 kV

Vgs th - Gate-Source Threshold Voltage: 3.25 V