MOSFET / Điốt Schottky SiC PM-MOSFET-SIC-SBD-D3 Microchip Technology MSCSM120AM042CD3AG

Fall Time: 67 ns

Rise Time: 55 ns

Technology: SiC

Mounting Style: Screw Mount

Transistor Polarity: N-Channel

Vf - Forward Voltage: 1.5 V at 180 A

Vr - Reverse Voltage: 1.2 kV

Pd - Power Dissipation: 2.031 kW

Vgs - Gate-Source Voltage: - 10 V, + 25 V

Typical Turn-On Delay Time: 56 ns

Typical Turn-Off Delay Time: 166 ns

Id - Continuous Drain Current: 495 A

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 5.2 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 1.8 V