MOSFET / SiC SBD PM-MOSFET-SIC-SBD-SP6P Microchip Technology MSCSM120TAM11CTPAG

Fall Time: 25 ns

Rise Time: 30 ns

Technology: SiC

Configuration: Triple

Mounting Style: Screw Mount

Transistor Polarity: N-Channel

Vf - Forward Voltage: 1.5 V at 50 A

Vr - Reverse Voltage: 1.2 kV

Pd - Power Dissipation: 1.042 kW

Vgs - Gate-Source Voltage: - 10 V, + 25 V

Typical Turn-On Delay Time: 30 ns

Typical Turn-Off Delay Time: 50 ns

Id - Continuous Drain Current: 251 A

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 10.4 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 1.8 V