MOSFET / Diode Schottky SiC PM-MOSFET-SIC-SBD-SP3F Microchip Technology MSCSM70VM19C3AG

Fall Time: 20 ns

Rise Time: 35 ns

Technology: SiC

Mounting Style: Screw Mount

Transistor Polarity: N-Channel

Vf - Forward Voltage: 1.5 V at 50 A

Vr - Reverse Voltage: 700 V

Pd - Power Dissipation: 365 W

Vgs - Gate-Source Voltage: - 10 V, + 25 V

Typical Turn-On Delay Time: 40 ns

Typical Turn-Off Delay Time: 50 ns

Id - Continuous Drain Current: 124 A

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 19 mOhms

Vds - Drain-Source Breakdown Voltage: 700 V

Vgs th - Gate-Source Threshold Voltage: 1.9 V