FET 60V 3Ohm Microchip Technology TN0106N3-G

Width: 4.19 mm

Height: 5.33 mm

Length: 5.21 mm

Fall Time: 3 ns

Rise Time: 3 ns

Technology: Si

Unit Weight: 453.600 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 2 ns

Typical Turn-Off Delay Time: 6 ns

Id - Continuous Drain Current: 350 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 3 Ohms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 2 V