FET 40V 6Ohm Microchip Technology TP2104K1-G

Width: 1.3 mm

Height: 0.95 mm

Length: 2.9 mm

Fall Time: 5 ns

Rise Time: 4 ns

Technology: Si

Unit Weight: 8 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 360 mW

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 4 ns

Typical Turn-Off Delay Time: 5 ns

Id - Continuous Drain Current: 160 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 150 mS

Rds On - Drain-Source Resistance: 6 Ohms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 1 V