FET 100V 3.5Ohm Microchip Technology TP2510N8-G

Width: 2.6 mm

Height: 1.6 mm

Length: 4.6 mm

Fall Time: 15 ns

Rise Time: 15 ns

Technology: Si

Unit Weight: 52.800 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 1.6 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 10 ns

Typical Turn-Off Delay Time: 20 ns

Id - Continuous Drain Current: 480 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 300 mS

Rds On - Drain-Source Resistance: 3.5 Ohms

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 1 V