FET 80V 4Ohm Microchip Technology VN0808L-G

Width: 4.19 mm

Height: 5.33 mm

Length: 5.21 mm

Technology: Si

Unit Weight: 453.600 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 10 ns

Typical Turn-Off Delay Time: 10 ns

Id - Continuous Drain Current: 300 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 170 mS

Rds On - Drain-Source Resistance: 4 Ohms

Vds - Drain-Source Breakdown Voltage: 80 V

Vgs th - Gate-Source Threshold Voltage: 800 mV