FET 60V 8Ohm Microchip Technology VP0106N3-G

Width: 4.19 mm

Height: 5.33 mm

Length: 5.21 mm

Fall Time: 4 ns

Rise Time: 5 ns

Technology: Si

Unit Weight: 453.600 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 P-Channel

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 1 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 4 ns

Typical Turn-Off Delay Time: 8 ns

Id - Continuous Drain Current: 250 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 150 mS

Rds On - Drain-Source Resistance: 8 Ohms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 1.5 V