MOSFET Microsemi APT18F60S

Vgs(th): 5 V

Vgs (Max): 30V

Gate Charge (Qg): 90nC

Power consumption: 335W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 600V

Continuous drain current: 19A

Input Capacitance (Ciss): 3550pF

Operating temperature range: -55 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 370mOhm

Drive Voltage (Max Rds On, Min Rds On): 10V

Datasheet