MOSFET Microsemi APT18M80S

Vgs(th): 5 V

Vgs (Max): 30V

Gate Charge (Qg): 120nC

Power consumption: 500W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 800V

Continuous drain current: 19A

Input Capacitance (Ciss): 3760pF

Operating temperature range: -55 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 530mOhm

Drive Voltage (Max Rds On, Min Rds On): 10V

Datasheet