MOSFET Microsemi APT20N60BC3G

Vgs(th): 3.9 V

Vgs (Max): 20V

Gate Charge (Qg): 114nC

Power consumption: 208W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 600V

Continuous drain current: 20.7A

Input Capacitance (Ciss): 2440pF

Operating temperature range: -55 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 190mOhm

Drive Voltage (Max Rds On, Min Rds On): 10V