MOSFET Microsemi APT40M35JVFR

Vgs(th): 4 V

Vgs (Max): 30V

Gate Charge (Qg): 1065nC

Power consumption: 700W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 400V

Continuous drain current: 93A

Input Capacitance (Ciss): 20160pF

Operating temperature range: -55 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 35mOhm

Drive Voltage (Max Rds On, Min Rds On): 10V

Datasheet