Trans MOSFET N-CH Si 500V 51A 4-Pin SOT-227 Microsemi APT51M50J

Type: Power MOSFET

Vgs(th): 5 V

Vgs (Max): 30V

Gate Charge (Qg): 290nC

Power consumption: 480W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 500V

Continuous drain current: 51A

Input Capacitance (Ciss): 11600pF

Operating temperature range: -55 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 75mOhm

Drive Voltage (Max Rds On, Min Rds On): 10V

Datasheet