Transistor lưỡng cực BJTs - Transistor NPN đa dụng 50 V, 100 mA Nexperia 2PD601ART,215

Width: 1.4 mm

Height: 1 mm

Length: 3 mm

Technology: Si

Unit Weight: 7.400 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 250 mW

DC Current Gain hFE Max: 90 at 100 mA, 2 V

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 60 V

Maximum DC Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 90

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 250 mV