Transistor lưỡng cực BJTs BC856W-Q/SOT323/SC-70 Nexperia BC856W-QF

Technology: Si

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 200 mW

DC Current Gain hFE Max: 475 at - 2 mA, - 5 V

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 80 V

Continuous Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 125 at - 2 mA, - 5 V

Collector- Emitter Voltage VCEO Max: 65 V

Collector-Emitter Saturation Voltage: 75 mV