MOSFET kênh N 20 V, MOSFET rãnh sâu Nexperia BUK4D110-20PX

Fall Time: 7 ns

Rise Time: 7 ns

Technology: Si

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 5 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 7.5 W

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Typical Turn-On Delay Time: 4 ns

Typical Turn-Off Delay Time: 9 ns

Id - Continuous Drain Current: 6.7 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 6 S

Rds On - Drain-Source Resistance: 110 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 1.3 V