BJTs - Transistor Lưỡng Cực 40V Thấp VCEsat Transistor NPN Nexperia PBSS4140U,115

Width: 1.35 mm

Height: 1 mm

Length: 2.2 mm

Technology: Si

Unit Weight: 28 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 250 mW

DC Current Gain hFE Max: 300 at 1 mA, 5 V

Gain Bandwidth Product fT: 150 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 40 V

Continuous Collector Current: 1 A

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 300

Collector- Emitter Voltage VCEO Max: 40 V

Collector-Emitter Saturation Voltage: 500 mV