BJT - Transistor lưỡng cực PBSS4350D-Q/SOT457/SC-74 Nexperia PBSS4350D-QF

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 750 mW

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: 3 A

Maximum DC Collector Current: 3 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 100

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 290 mV