BJTs - Transistor lưỡng cực NPN/PNP đa dụng, transistor đôi Nexperia PEMZ7,115

Width: 1.3 mm

Height: 0.6 mm

Length: 1.7 mm

Technology: Si

Unit Weight: 2.800 mg

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: NPN, PNP

Pd - Power Dissipation: 300 mW

DC Current Gain hFE Max: 200 at 10 mA, 2 V

Gain Bandwidth Product fT: 420 MHz, 280 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 15 V

Maximum DC Collector Current: 500 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 200 at 10 mA, 2 V

Collector- Emitter Voltage VCEO Max: 12 V

Collector-Emitter Saturation Voltage: 220 mV