BJTs - Transistor lưỡng cực 400 V, 0.3 A NPN transistor điện áp cao điện áp bão hòa VCE thấp Nexperia PMBTA44,215

Width: 1.4 mm

Height: 1 mm

Length: 3 mm

Technology: Si

Unit Weight: 1 g

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 250 mW

DC Current Gain hFE Max: 200

Gain Bandwidth Product fT: 20 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 500 V

Continuous Collector Current: 300 mA

Maximum DC Collector Current: 300 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 40

Collector- Emitter Voltage VCEO Max: 400 V

Collector-Emitter Saturation Voltage: 750 mV