BJTs - Transistor lưỡng cực PNP cho mục đích chung Nexperia PMBTA45-QR

Technology: Si

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 300 mW

Gain Bandwidth Product fT: 35 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 500 V

Continuous Collector Current: 150 mA

Maximum DC Collector Current: 500 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 50 at 50 mA, 10 V

Collector- Emitter Voltage VCEO Max: 500 V

Collector-Emitter Saturation Voltage: 65 mV