MOSFETs PMCXB1000UE/SOT1216/DFN1010B-6 Nexperia PMCXB1000UEZ

Technology: Si

Unit Weight: 1.232 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Qg - Gate Charge: 1.05 nC, 1.2 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel, P-Channel

Pd - Power Dissipation: 410 mW

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Id - Continuous Drain Current: 590 mA, 410 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 670 mOhms, 1.4 Ohms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 450 mV, 950 mV