MOSFETs PMH600UNE/SOT8001/DFN0606-3 Nexperia PMH600UNEH

Fall Time: 36 ns

Rise Time: 3 ns

Technology: Si

Unit Weight: 0.447 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 310 pC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 625 mW

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 1 ns

Typical Turn-Off Delay Time: 9 ns

Id - Continuous Drain Current: 800 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 1.1 S

Rds On - Drain-Source Resistance: 620 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 450 mV