Transistor lưỡng cực BJTs 45 V, 100 mA PNP/PNP transistor đôi đồng bộ Nexperia PMP5501QASZ

Technology: Si

Configuration: Dual

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 350 mW

DC Current Gain hFE Max: 0.95

Gain Bandwidth Product fT: 175 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 50 V

Continuous Collector Current: - 100 mA

Maximum DC Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 1.05

Collector- Emitter Voltage VCEO Max: 45 V

Collector-Emitter Saturation Voltage: 200 mV