BJTs - Transistor lưỡng cực 60 V, 600 mA Transistor chuyển mạch PNP Nexperia PMST2907A,115

Width: 1.35 mm

Height: 1 mm

Length: 2.2 mm

Technology: Si

Unit Weight: 28 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 200 mW

DC Current Gain hFE Max: 75 at 100 uA, 10 V

Gain Bandwidth Product fT: 200 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: - 600 mA

Maximum DC Collector Current: 600 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 75

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 1.6 V