Transistor RF NPN băng rộng silicon băng rộng NXP BFU590GX

Technology: Si

Unit Weight: 97.726 mg

Output Power: 21.5 dBm

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: Bipolar Wideband

Operating Frequency: 8.5 GHz

Transistor Polarity: NPN

Pd - Power Dissipation: 2 W

DC Current Gain hFE Max: 130

Gain Bandwidth Product fT: 8.5 GHz

Emitter- Base Voltage VEBO: 2 V

Operating Temperature Range: - 40 C to + 150 C

Collector- Base Voltage VCBO: 24 V

Continuous Collector Current: 200 mA

Maximum DC Collector Current: 300 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

DC Collector/Base Gain hfe Min: 60

Collector- Emitter Voltage VCEO Max: 12 V