Power MOSFET NXP PHT6N06T,135

Type: Power MOSFET

Vgs(th): 4 V

Vgs (Max): 20V

Gate Charge (Qg): 5.6nC

Power consumption: 8.3W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 55V

Continuous drain current: 5.5A

Input Capacitance (Ciss): 175pF

Operating temperature range: -55 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 150mOhm

Drive Voltage (Max Rds On, Min Rds On): 10V

Datasheet