Transistor lưỡng cực BJTs - Bipolar BIP NPN 10A 50V onsemi 2SC6144SG

Technology: Si

Unit Weight: 1 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 25 W

Gain Bandwidth Product fT: 330 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: 10 A

Maximum DC Collector Current: 10 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 200

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 180 mV