BJTs - Transistor Lưỡng Cực 80V, 1A, NPN, WDFNW3 2X2 onsemi BCP5616MTWG

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 1.5 W

DC Current Gain hFE Max: 250

Gain Bandwidth Product fT: 140 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 100 V

Continuous Collector Current: 1 A

Maximum DC Collector Current: 2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 63

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 500 mV