BJTs - Transistor Lưỡng Cực Transistor NPN Đôi onsemi NSM4002MR6T1G

Technology: Si

Unit Weight: 13.430 mg

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 300 mW

DC Current Gain hFE Max: 300, 600

Gain Bandwidth Product fT: 300 MHz, 100 MHz

Emitter- Base Voltage VEBO: 6 V, 5 V

Collector- Base Voltage VCBO: 60 V, 50 V

Continuous Collector Current: 200 mA, 500 mA

Maximum DC Collector Current: 200 mA, 500 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 30 at 100 mA, 1 V, 40 at 500 mA, 1 V

Collector- Emitter Voltage VCEO Max: 40 V, 45 V

Collector-Emitter Saturation Voltage: 300 mV, 700 mV