JFET loại N kênh + N kênh J-FET onsemi NSVJ5908DSG5T1G

Technology: Si

Configuration: Dual

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: N-Channel

Pd - Power Dissipation: 300 mW

Gate-Source Cutoff Voltage: - 700 mV

Drain-Source Current at Vgs=0: 32 mA

Id - Continuous Drain Current: 50 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 24 mS

Vgs - Gate-Source Breakdown Voltage: - 15 V

Vds - Drain-Source Breakdown Voltage: 15 V